Abstract
We propose the idea of making quantum dot (QD) lasers by embedding direct-bandgap QDs in a short-period superlattice whose bandgap is indirect. In comparison with similar QD lasers with barriers of direct band gap, this technique not only reduces the temperature dependence of threshold current, but also leads to extremely small linewidth enhancement factor, making low-temperature sensitivity, low chirp, and narrow linewidth semiconductor lasers feasible.
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