Abstract
This paper shows the design of the position sensor, consisting on a structure composed by a structural aluminum layer whose purpose is to act as a linear electrostatic micromotor; it has also a polysilicon layer acting as part of the proposed position sensor, which will operate as a floating gate of a MOS transistor (FGMOS). This structure is designed under the rules of the standard 0.5 micron CMOS technology. Through this, a relation between the position of the micromotor and the current through the FGMOS is obtained. The simulations were obtained using PSpice.
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