Design of On-Chip Millimeter-Wave Bandpass Filters Using Multilayer Patterned-Ground Element in 0.13-$\mu$ m (Bi)-CMOS Technology

Abstract

A novel design methodology for transmission-zero (TZ) generation in on-chip millimeter-wave (mm-wave) bandpass filters (BPFs) based on the original concept of multilayer patterned-ground (MPG) element is presented in this article. Unlike most of prior-art techniques available in the technical literature, this method has two distinct features. First, it is inherently suitable for miniaturized BPF design since the MPG element can be implemented through the layers below the top-metal layer and, thus, without occupying any additional die/chip area. Second, it provides a simple but effective way to produce a TZ at the upper stopband without adversely affecting other BPF performance metrics. To fully understand the operational insight of the engineered approach, a simplified LC -equivalent behavioral circuit model for the MPG element is developed. Using this model, three second-order BPFs based on different circuit configurations are codesigned to further demonstrate the experimental feasibility of the technique. All the filter prototypes are fabricated in a standard 0.13- $\mu \text{m}$ bipolar complementary metal–oxide–semiconductor [(Bi)-CMOS] technology. The obtained on-wafer measurements show that all fabricated BPF chips have the capability to suppress the second-order harmonic by more than 30 dB, which indicates the effectiveness of the proposed integrated BPF design approach with the MPG element.