Abstract
Nanowire superconducting single-photon detectors (SSPDs) consist of a superconducting wire of nanoscale cross-section [1], typically 4×100 nm2. A current close to the device critical current renders the nanowire sensitive to single photons. SSPDs are known for their high efficiency, low jitter, low dark count rate and fast reset time. An important challenge for future application of SSPDs is to extend the useful wavelength range towards the infrared without comprising detector speed or dark count rate. To this end, we explore optical designs with wider nanowires that utilize efficient detection of single photons at the edge of the nanowire. Silicon nanowires on top of a NbN nanowire increase both the calculated total absorption and the internal detection efficiency significantly compared to a standard meandering wire geometry.
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