Design of Magnetic Tunnel Junction based Low Power Non-Volatile Ternary Content Addressable Memory

Abstract

Ternary content addressable memory (TCAM) are widely used for their high speed search operation. However, TCAMs have larger area and power consumption. The use of advanced technology nodes and emerging non-volatile devices can improve the same. In this paper, magnetic tunnel junction (MTJ), which is a non-volatile device is used to reduces the overall power consumption of TCAM by realizing zero standby power. A novel Verilog-A model of MTJ which is suitable for SOI technology was developed. The conventional NOR and NAND type TCAM cells, and two MTJ based hybrid TCAM cells are constructed using 45 nm RF-SOI technology node. The proposed cells use only one transistor for precharge. The simulation results show that the NOR and NAND type TCAM cells consumes 29.11 μW and 19.33 μW of power respectively. The MTJ based TCAM cells consume 7.33 μW and 8.58 μW of power which is about 70% and 63% lower compared to the NAND and NOR TCAM cells.