Abstract

This study presents a low-power reconfigurable complimentary MOS low-noise amplifier (LNA) for multistandard wireless application which includes 4G (LTE), 2800 MHz band applications. Through current-reuse, and forward-body-bias techniques, LNA can operate at a reduced drain bias voltage while preserving excellent gain performance. The LNA shows a high standard of power gain with low noise figure and low DC power dissipation. A combination of positive-feedback with common drain and transformer coupled feedback is worn to attain low noise figure and high gain. The design is based on 180 nm CMOS technology. The simulated result shows that the LNA is reconfigurable from 2.3 GHz to 2.8 GHz. It attains power-gain (S 21 ) from 17.35 dB to 15.74 dB at 2.3 GHz and from 11.76 dB to 10.53 dB at 2.8 GHz with least NF of 0.76 dB. The LNA consumes 1.47 mW from 0.65 V supply and have maximum IIP3 of -2.32 dBm.

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