Design of Low Noise and Ultra High Gain LNA with SOI Process Technology

Abstract

In this paper, we present the design of low noise and ultra-high gain low noise amplifier (LNA) with external inductor in 65nm SOI process technology (Tower Jazz 65RSB) for 2.0~2.2 GHz frequency range. We proceeded with the design in the direction of minimizing the parasitic capacitance component seen in Cgs and at the input. Through this, we designed the ultra-high gain LNA. Complete simulation analysis of the circuit results in center frequency of 2.1GHz, with 23.6 dB voltage gain, 0.83 dB noise figure, 50 Q input impedance, and 10.4 mA current at 1V power supply.