Abstract
In this paper, we have investigated the influence of plasmonic material i.e. ITO (Indium Tin Oxide) in a directional coupler based silicon optical modulator. An electric potential of 2V is applied to the device. The characteristics of the optical modulator is observed in the range of 1.31 μm to 1.55 μm wavelength. Also, numerical simulation reveals a coupling length of 2.5 μm. The investigated optical modulator can play a key role in CMOS compatible silicon photonics integrated circuits.
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