Design of H-Plane Tee Junction in RSIW for Ku-Band Applications

Abstract

The major challenge in signal transmission is to reduce losses. This paper concerns the designing, considerations and analysis of H-plane Tee junction in rectangular substrate integrated waveguide technology with minimum losses. The proposed SIW based design unites the advantages such as low fabrication cost, low signal losses, planer profile, easily integrated with the other microwave devices and high performance in microwave application. The transmission coefficients, S21 and S31, show that the input power (3 W) in a waveguide is equally split into −8 dB power or combined −8 dB power in needed manner by using presented SIW Tee junction. The divided E-fields are of the same phase as the E-field at the input port. The junction is optimized in Ku-band [12–18 GHz] for super high frequency of 15.5 GHz. Unlike other Tee junctions, the proposed SIW Tee junction is designed on modified epoxy substrate and the measured results demonstrate that the reflection coefficient dB (S11) is −62.3754 dB, reflection loss is 0.0008 dB, normalized impedance is 0.2411 and VSWR is 1.0015 at the frequency of 15.5 GHz which are higher than the acceptable values. Moreover, the reflection coefficient and VSWR remain below the value of −12.5 dB and 1.2 respectively across the entire Ku-band. Thus, through the study of results, proposed SIW Tee junction is very effective for signal transmission with low losses over the entire Ku-band.