Design of Y junction in RSIW with chamfered bends for V-band applications

Abstract

This paper concerns the designing, considerations and analysis of Y junction in rectangular substrate integrated waveguide technology using HFSS code. The proposed design unites the advantages such as low fabrication cost, low signal losses, planer profile, easily integrated with the other microwave devices and high performance in microwave application. The transmission coefficients S21 and S 31 shows that the input power (3W) in a waveguide is equally split into −8dB power or combined −8dB power in needed manner by using presented SIW Y junction. The divided E-fields are in same phase as the E-field at the input. The propagation direction of electromagnetic waves is not always straight and if the direction of wave changes in bounded medium, it encounters bending loss which is due to reflection of wave from chamfer less bends. Thus, for direction change in bounded medium without incurring bending loss, chamfer bends have been designed. The study contributes the designing and analysis of chamfered microwave bends in proposed rectangular substrate integrated waveguide. These newly designed bends are optimized in V-band [40–75 GHz] at super high frequency of 55 GHz. The proposed SIW Y junction is designed on RT Duroid substrate and the measured results demonstrate that The return loss is −44.5668 dB, VSWR at the output port is 1.1 & 1.2 and reflection loss is 0.0059 dB at 55 GHz frequency. Thus, through the study of results, proposed SIW Y junction is very effective for signal transmission with low losses over entire V-band.