Abstract
High temperature (HT) gate driver is a key technology for the motor drive application for electrical vehicle (EV) in HT environment. Based on the available HT devices, this paper introduces the design of HT gate driver for SiC MOSFET. The gate driver architecture with isolation function is discussed first. Then, gate driver hardware design is presented. Besides the basic driving function of driving ability and isolation, the over current protection and cross-talk suppression functions of the gate driver are emphasized and simulated, too. With the design process in this paper, SiC MOSFET can be driven stably and reliably at HT.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
