Abstract
A high speed InGaAs/InP one-sided junction photodiode (OSJ-PD) with low junction capacitance is presented and investigated for the first time. Compared with the well known uni-traveling carrier photodiode (UTC-PD), the OSJ-PD has the advantages of simpler epitaxial layer structure and lower junction capacitance, while maintaining the characteristics of high speed and high output power. The OSJ-PD is studied by simulation. The performance characteristics of OSJ-PD including internal electric field distribution, energy band diagram, frequency response, photocurrent and junction capacitance, are carefully studied.
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