Abstract
An evanescently coupled one-sided junction waveguide photodiode (EC-OSJ-WGPD) is proposed and investigated numerically. The one-sided junction photodiode has a simple structure, while the characteristics of high speed and high output power are maintained. The designed EC-OSJ-WGPD with an absorption layer thickness of 350 nm achieves a bandwidth of 44.5 GHz and responsivity of 0.98 A/W. Comprehensive analyses of the EC-OSJ-WGPD are presented including photogeneration rate, internal optical power distribution, energy band diagram, internal electric field, photocurrent, and 3-dB bandwidth.
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