Design of ePixM, a fully-depleted monolithic CMOS active pixel sensor for soft X-ray experiments at LCLS-II

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The LCLS-II Free Electron Laser (FEL) will produce X-ray pulses with a repetition rate of up to 1 MHz and energies between 250 eV and 5 keV. Experiments conducted at LCLS-II will require 2D imaging detectors with a unique set of features, such as high-spatial resolution, low-noise performance, high-dynamic range and high-frame rates up to 1 MHz. We present the design of ePixM, a fully-depleted monolithic CMOS detector tailored for soft X-rays applications at high-repetition rates FEL. It consists of an array of 384×192 active pixel sensors, with a pixel size of 50×50 μm2 and a total sensitive area of 2×1 cm2. ePixM has been designed in a 150 nm CMOS technology on high-resistivity substrate to achieve full depletion of the substrate. Each pixel includes a Charge Sensitive Amplifier (CSA) with gain auto-ranging capability and a noise-shaper performing Correlated Double Sampling (CDS). A novel technique named correlated pre-charging removes the excess noise introduced by the gain-switching mechanism. The performance of the design has been evaluated through post-layout simulations. The Equivalent Noise Charge (ENC) of 11.3 electrons enables single-photon detection at X-ray energies down to 250 eV, and the dynamic range exceeds 103 photons at 500 eV thanks to the auto-ranging circuitry.