Abstract

A low profile cavity-backed dual-band antenna based on half mode substrate integrated waveguide (HMSIW) technology is designed. HMSIW technology is used to make semicircular resonant cavity. An additional resonance can be generated by loading a U-shaped strip outside the radiation aperture of HMSIW cavity, thus realizing the dual-band performance. The reflection characteristics of single-band and dual-band HMSIW cavity-backed antennas are studied. The simulated results show that the resonant frequencies can be controlled easily by changing the antenna parameters. The proposed antenna has the characteristics of low profile, high gain and low cross polarization.

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