Abstract
In this paper, an ultra-wide band (UWB) low noise amplifier (LNA) is implemented by using 90nm RF CMOS technology. The designed LNA achieves high flat band gain (S21) and low noise figure (NF) in the frequency of interest. The proposed LNA operates in the frequency range of 3GHz to 8GHz. In this work, wide band matching is achieved by designing common gate configuration at the input stage. The current reuse and noise cancellation techniques are introduced to improve flat band gain and minimize both noise figure and power consumption. The noise figure is improved by cancelling dominant noise sources with additional hardware. The proposed LNA attains flat band gain of 26.5dB and input matching less than -12dB for entire UWB band. This work achieves noise figure of 2.1dB to 2.59dB in frequency band of interest. Additionally, power consumption of the circuit is 20mW at 1.8V supply voltage.
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