Abstract
An high linearity power amplifier based on TSMC 65nm LP CMOS process was designed, which can meet the application requirements of LTE MTC communication standards in 1.8 8∼1.92GHz band, and the average efficiency was improved. As the core module of the system, the power amplifier employs a two-stage linear amplifier structure, and implemented with the technique of lossy networks and matching compensation, meets the requirements of indicators in wide-band range. According to the post-simulation results, in the working frequency band of 1.88∼1.92GHz, the proposed PA achieves maximum output power of more than 26dBm, power gain is over 20dB.The OP1dB is more than 24dBm,and the power added efficiency (PAE) at OP1dB is over 25%.The simulated S11 is under -10dB and achieved good input matching feature.
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