Abstract

A single-ion-implantation (SII) system with an implantation accuracy of several tens of nanometers and energy of several tens of kilo-electron volts (keV) is developed to produce an array of nitrogen-vacancy centers (NV centres). The device with the array is expected to be used for quantum information technologies. The system consists of a Paul-trap type laser cooling device (PTLCD) and an electrostatic focusing lens. The PTLCD generates a few single-nitrogen-ions via an ion-cooling procedure. The SII system needs the implantation of single-nitrogen ions with 100% probability, called “deterministic implantation,” to build the array. A focusing lens without an aperture and with a magnification of ≪ 1 must be developed to realize the deterministic implantation. In this study, an electrostatic focusing lens, namely a two-stage acceleration lens, was designed by mainly investigating a second acceleration lens that is suitable for the SII system based on the previously developed two-stage acceleration lens. A new two-stage acceleration lens with a magnification of 0.006 was designed and a numerical simulation based on the lens demonstrated that the beam width for a single-nitrogen ion with an energy of 14 keV was 4.5 nm including intrinsic aberrations at full width at half maximum.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call