Abstract
This paper contains elementary characteristics of materials such as silicon-germanium (SiGe), gallium-arsenide (GaAs) and indium-phosphide (InP), procedures and technologies which support development of modern and future Radio Frequency (RF) and Fiber Optics (FO) applications operating at ever-higher frequencies and speeds. Market requirements, possibilities of modern materials and technologies dictate to designers improvement of the product design the access through higher levels of circuit integration, new packaging and testing of integrated circuits (1C).
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