Design of a ternary static memory cell using carbon nanotube-based transistors

Abstract

In this Letter, the authors investigate the use of carbon nanotube-based field effect transistors (CNTFET) for the design of a ternary static random access memory (SRAM). The authors consider two designs – one using 8 transistors and the other using 14 transistors. Using circuit simulation models for CNTFETs, the authors show that both designs produce a functional ternary SRAM cell. The authors also measure the delay and power of the read-and-write operation of the ternary SRAM created using both models and show that the delays are comparable.