Abstract
A resonant-cavity-enhanced p-i-n photodetector has been designed and analyzed to operate at a wavelength of 360 nm based on the AlxGa1-xN material system. The novel approach has been adopted of using epitaxial AlN/AlxGa1-xN quarter-wave stacks as the distributed Bragg reflector that serves as the front mirror. An AlxGa1-xN absorptive filter layer is incorporated to suppress all but one resonant mode to ensure single, narrow-band operation. This device structure is projected to achieve wavelength selective, high speed, and high quantum efficiency operation in the ultraviolet. MOCVD-grown 6 1/2-pair AlN/AlxGa1-x
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
