Abstract
In this paper, a novel low-voltage triggered silicon-controlled rectifier (NLVTSCR) with low trigger voltage and higher holding voltage is proposed and implemented in a 28nm CMOS process. The proposed NLVTSCR in the TLP test has a low trigger voltage and an adjustable high holding voltage from 3.44 V to 4.93 V. In addition, it does not require any additional masks, making it an excellent candidate for 3.3V ESD protection. Compared to conventional low triggered voltage silicon-controlled rectifier (LVTSCR), the proposed NLVTSCR device provides a higher holding voltage than its conventional counterpart.
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