Abstract
In this paper, a novel robust low-voltage-triggered silicon-controlled rectifier (LVTSCR) with high holding voltage, low trigger voltage, and low overshoot voltage has been proposed for 5 V integrated circuit electrostatic discharge (ESD) protection. The new LVTSCR integrates an extra low-resistance current path by embedding an NMOS transistor into the traditional LVTSCR. This extra current path will divert part of the ESD current, thus resulting in a lower overshoot voltage as well as better quasi-static I–V characteristics in the new structure. As such, the holding voltage of the new LVTSCR has been increased by ∼23%, the quasi-static triggering characteristic has been decreased by ∼8%, and the overshoot voltage has been improved by ∼38%.
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