Abstract
AbstractThe technology, design procedure and measurements of an E‐band (71‐86 GHz) high performance gallium arsenide (GaAs) low‐noise amplifier (LNA) are presented. The latter provides a gain in excess of 20 dB, an average in‐band noise figure (NF) of 2.3 dB, absorbing 60 mW DC bias power. A European space‐qualified technology (OMMIC's GaAs 70 nm process) has been selected to demonstrate the feasibility of employing the proposed LNA for production‐ready wireless backhaul point‐to‐point communication systems. A possible installation scenario has been depicted, in order to verify the maximum distance at which TX and RX antennas can be placed and employing the proposed LNA as first amplifying stage of the receiver chain.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
