Optimization Analysis of Low-Noise Amplifier

Abstract

This paper mainly analyzes the important component of a wireless receiver – low-noise amplifiers (LNA). Low-noise amplifiers can reduce the effect of noise on the received signal and amplify signals. For the better development of wireless communication technology, remote control, and other related fields, it is necessary to optimize the design of low-noise amplifiers, so that low-noise operational amplifiers can finally obtain high gain, low noise figure, and other advantages. This paper analyzes the optimization design of LNA in the field of Global Navigation Satellite Systems (GNSS). This paper analyzes a low-noise amplifier design with the operation of concurrent dual-band for GNSS receivers with a single channel. The optimized design of a low-noise amplifier in this field uses a low-cost 0.18µm CMOS tube and adds load capacitances and a feedforward path to reduce the noise figure (NF) of the system. Noise figures in 1.2 GHz and 1.57 GHz bands are reduced by about 0.9 dB. In addition, the high gain, high linearity, and other excellent properties are shown in 1.2 GHz and 1.57GHz. In the application of 5G/6G network technology, the optimized design of Gallium Arsenide (GaAs) PHEMT technology with a gate length of 0.3µmm and inductively degraded common source topology phase structure is adopted. From this optimization, the noise figure is optimized to 1.3-1.4, and the gain of the system is 20-22 dB. At the same time, good linearity is also shown. Then, the prospects of semiconductor materials such as Gallium Nitride (GaN) and Indium Phosphide (InP), which have the advantages of high electron mobility and low-cost design, in optimizing low noise operational amplifiers. To a certain extent, the in-depth study of the optimal design of LNA can improve the technical level of wireless communication, aerospace, and other fields.