Design of a Low-Power Short-Channel Electrostatically Doped Silicene Nanoribbon FET

Abstract

In this article, the transfer and output characteristics of an electrostatically doped (ED) 4-armchair silicene nanoribbon (4-ASiNR) field-effect transistor (FET) with three gates are investigated. The numerical simulations are carried out based on the self-consistent solution of the Poisson and Schrodinger equations within the nonequilibrium Green’s function (NEGF) formalism, implemented in the NanoTCAD ViDES simulator. Results show that ED SiNR-FET has better characteristics than chemically doped (CD) SiNR-FET. Additionally, ED-device is inherently free of negative impacts of impurities on the transistor’s performance. The ED SiNR-FET functionality is analyzed using different channel lengths, introducing the extended channel ED-device (ECED) with an improved ${I}_{ \mathrm{\scriptscriptstyle ON}} / {I}_{ \mathrm{\scriptscriptstyle OFF}}$ ratio of $3.8\times 10^{5}$ and a significant ${I}_{ \mathrm{\scriptscriptstyle ON}}$ of 4.6 mA/ $\boldsymbol \mu \text{m}$ . A 15 nm ECED SiNR-FET with an 8 nm channel is studied under different temperatures and supply voltages. Based on the results, low-power (LP) and high-performance (HP) applications are suggested for the ECED-device, with the minimum subthreshold swing of 64 mV / dec and the maximum transconductance of $63~\boldsymbol \mu \text{S}$ , respectively.