Abstract
In this paper, the design of a novel low-noise front-end readout circuit for Cadmium zinc telluride (CdZnTe) X-ray and γ-ray detectors is described. The front-end readout circuits include the charge sensitive amplifier (CSA) and the CR-RC shaper is implemented in TSMC 0.35 μm mixed-signal CMOS technology. The die size of the prototype chip is 4.9 mm × 2.2 mm. The simulation results show that, the noise performance is 46 electrons + 10 electrons/pF, and power consumption is 1.65 mW per channel.
Highlights
Cadmium zinc telluride (CdZnTe) crystal [1] is a new semiconductor material which has a high performance in the radiation environment at room-temperature
Since the CdZnTe detectors are usually used for the detection of X-ray and γ-ray, the input signals, which would be processed by the readout circuit, should exist in a high bandwidth
In order to investigate the features of the front-end readout circuit designed above, we have made a simulation by SPECTRE
Summary
Cadmium zinc telluride (CdZnTe) crystal [1] is a new semiconductor material which has a high performance in the radiation environment at room-temperature. As the most important part of the detector system, the low noise front-end readout circuits would have an important impact for the performances of the whole system. Since the CdZnTe detectors are usually used for the detection of X-ray and γ-ray, the input signals, which would be processed by the readout circuit, should exist in a high bandwidth. In order to ensure the signal to noise ratio (SNR) and sufficient range of the output signal, the front-end readout circuits with very low-noise and very high gain are necessary. For these two requirements, the low-noise design is the most important in the various performance requirements [4]
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