Abstract
We have made a Monte Carlo simulation to design a high resolution ion beam column with a liquid metal ion source (LMIS), which employs Koehler illumination. The use of Koehler illumination is one of the few ways to avoid the problem caused by the non‐Gaussian current density profile, which is due to the stochastic angular broadening of the ion beam near the source. Thus we can predict a 20 nm beam spot size with 1 nm edge sharpness and about 1 pA of ion current on the target plane at 100 keV beam energy with a Ga LMIS.
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More From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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