Design insights for reliable energy efficient OxRAM-based flip-flop in 28nm FD-SOI

Natalija Jovanovic,Elisa Vianello,Borivoje Nikolic,Lirida Naviner,Olivier Thomas

doi:10.1109/s3s.2015.7333551

Design insights for reliable energy efficient OxRAM-based flip-flop in 28nm FD-SOI

Natalija Jovanovic, Elisa Vianello + Show 3 more

https://doi.org/10.1109/s3s.2015.7333551

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Publication Date: Oct 1, 2015

Affiliation: CEA LETI, Université Grenoble Alpes, Grenoble Institute of Technology, CEA Grenoble, Atomic Energy and Alternative Energies Commission, University of California, Berkeley

#Non-volatile Flip-flops #28nm FD-SOI + Show 8 more

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Abstract

This paper investigates the design architecture and the optimum resistance state values for high-endurance, high-yield energy-efficient OxRAM-based non-volatile flip-flops (NVFF) for ultra-low power applications in 28nm FD-SOI. Silicon measurements demonstrate that a low programming current improves endurance, but at the expense of a reduced memory window (R OFF /R ON ). Statistical analyses show that the scaling limitation of the NVFF operating voltage in restore mode can be overcome with a narrow memory window by using a current-based design solution. Low variability of the FD-SOI enables to operate down-to 0.7V with more than 108 of endurance cycles.

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