Abstract
This paper presents the design, analysis, fabrication and testing of a compact SiC MOSFET gate driver for SiC devices. The features of active Miller clamping and overcurrent protection are implemented in the gate driver. A double pulse test PCB is designed, developed and tested also. The fabricated gate driver has been tested for device characterization. The duty ratio of the gate pulses are adjusted such that rated current flows through the devices. The gate driver has been simulated using commercially available PCB design and simulation software(s) for verification of the functionality and the overcurrent protection. Excellent agreement between the simulated and the experimental results upholds the accuracy of the simulation and experimental results.
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