Abstract
We present the design, fabrication, and characterization of a resonant magnetic field sensor based on Microelectromechanical systems (MEMS). This sensor exploits the Lorentz force principle and uses a Wheatstone bridge of p-type piezoresistors. Its resonant structure is integrated with silicon beams (15 μm wide and 5 μm thick) and an aluminum loop (9 μm wide and 1 μm thick). The sensor operates in its first flexural resonant frequency (22.99 kHz) and has a linear response, a high resolution (43 nT), a sensitivity of 1.94 V·T−1, a quality factor of 96.6 at atmospheric pressure, and power consumption close to 16 mW.
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