Abstract
This work numerically elucidates the considerations and optimizations of nanoscale Schottky barrier Flash cells with source-side injection programming. Due to the unique Schottky barrier junction and particular source-side injection programming, the considerations of device parameters in Schottky barriers Flash cells are dissimilar from those in traditional drain-side channel hot-electron cells. Dependences of design parameters, such as Schottky barrier height, tunnel-oxide thickness, substrate concentration, junction depth, and channel length, on the source-side injection programming are clarified to optimize nanoscale Schottky barrier Flash memory. A feasible design of 50 nm Schottky barrier cell is illustrated to have high injection efficiency at low programming voltage.
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