Abstract
Many demanding power system requirements usher motivations for high-density, miniaturized capacitors capable of quickly sourcing large quantities of current. Various efforts achieved high capacitive density (∼500 nF/mm2) at D.C., but many applications promote an interest in transient and high-frequency (HF) characteristics. Thin capacitors (100–640 μm) were micromachined using several industry standard Si MEMS processes resulting in large surface area, high-density capacitive storage devices (7.34 nF/mm2). An evaluation of high-speed (1 GHz), energy storage devices and their respective fabrication technologies has been closely compared by considering each capacitor design's transient ring-down characteristics. Although their capacitive density remains ∼10 nF/mm2, large amounts of current (∼100 A/ns) were sourced while retaining desirable characteristics at high frequencies. These devices have been optimized as embedded passives and demonstrate compatibility with Si interposer technology.
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