Design Considerations of Charge Pump for Antenna Switch Controller With SOI CMOS Technology

Abstract

An enhanced charge pump for the antenna switch controller using the silicon-on-insulator (SOI) CMOS technology is presented in this brief. The pseudo cross-coupled technique is proposed to reduce parasitic capacitances at charging/discharging nodes through charge transferring paths, which improves the current drive capability and provides better accuracy of the output voltage. Furthermore, the codesign between the gate control voltages of power MOS transistors and the clock drive signals of pumping capacitors has been investigated to eliminate the reversion loss and reduce the ripple voltage. The pseudo cross-coupled charge pump has been fabricated in the 0.18- $\mu\text{m}$ SOI CMOS technology with an area of 0.065 mm2. According to the comparison results of the conventional and enhanced charge pumps, the start-up time and the recovery time are typically shortened by 71.4% and 21.7%, owing to the improvement of the current drive capability, and the ripple voltage at no-load condition is greatly reduced by 46.1%.