Design Considerations for Boron-Diffused and Implanted 4H-SiC Epitaxial Neutron Detectors for Dosimetry and Monitoring Applications

Abstract

Thermal-neutron detectors based on 4H-SiC semiconductor and 10B converter reactions have many advantages for neutron dosimetry and monitoring applications. These radiation-resistant detectors are capable of stable operation in elevated-temperature environments up to 700 °C for extended periods. The recent development of SiC detectors where the 10 B is incorporated into the detector by ion implantation or diffusion leads to interesting application-specific design possibilities. The design of boron-diffused detectors is discussed as well as ways to optimize their design.