Simulation of P-Type Doping Profile Prediction Using Different Ion Implantation and Diffusion Model

Abstract

Ion implantation and subsequent diffusion are very essential stages in today's advanced VLSI (Very Large Scale Integration) semiconductor devices processing. High precision calibration of device simulation is a key procedure to ensure simulation is accurate. For this purpose, accurate prediction of the doping profiles resulted from ion implantation and diffusion will be studied using a few models of ion implantation and diffusion. We collected data of Boron as P-type ion implantation profiles using TCAD simulation software with different ion implantation models and diffusion models then compared with Secondary Ion Mass Spectrometry (SIMS) data of ion implantation profile database as experimental data. Models plays very important role in this calibration. In this paper, calibrations have done using Monte Carlo and Taurus analytical as implantation model and pd.full, pd.fermi and pd.5stream as diffusion model. All calibration simulations were simulated using Synopsys TCAD Simulation. The experimental results shown by using Monte Carlo ion implantation model with pd.5str diffusion model is close to SIMS profile.