Design Considerations for 2-D Dirac-Source FETs—Part I: Basic Operation and Device Parameters

Abstract

Dirac-source field-effect transistors (DS-FETs) have been proposed as promising candidates for low-power switching devices by leveraging the Dirac cone of graphene as a low-pass energy filter. In particular, using 2-D materials as the channel in a DS-FET is of interest for ultimate scaling purposes. In this article, we investigate the design considerations for 2-D DS-FETs using ballistic simulations based on the Landauer formalism. We study the impact of several key device parameters on the device performance, such as graphene doping, Schottky barrier heights, and effective mass of the 2-D channel. In Part II of this article, we study the impact of nonidealities on the performance of DS-FETs and benchmark the performance of DS-FETs for different channel materials.