Abstract
A new class of photoresist matrix polymers based on vinyl ether-maleic anhydride (VEMA) alternating copolymers were developed for ArF single-layer lithography. These polymers were synthesized by copolymerization of alkyl vinyl ether- maleic anhydride alternating copolymers and acrylate derivatives with bulky alicyclic acid-labile protecting groups. They showed a good controllability of polymerization and high transmittance. Also, these resists showed a good adhesion to the substrate, high dry-etching resistance against CF<SUB>4</SUB> mixture gas (1.02 times the etching rate of DUV resist) and high selectivity to silicon oxide etching. Using an ArF excimer laser exposure system with 0.6 NA, 120 nm L/S patterns have been resolved under conventional illumination.
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