Abstract
A new class of photoresist matrix polymers based on vinyl ether-maleic anhydride (VEMA) alternating copolymers were developed for ArF single-layer lithography. These polymers were synthesized by radical polymerization of alkyl vinyl ether-maleic anhydride, and acrylate derivatives having bulky alicyclic acid-labile protecting groups. They showed a good controllability of polymerization and high transmittance. Also, the resists showed a good adhesion to the substrate, high dry-etching resistance against CF4 mixture gas (1.02 times the etching rate of DUV resist), and high selectivity to the silicon oxide layer in etching. The resolution and pattern profiles were not deteriorated with the PED time, 30min. Using an ArF excimer laser exposure system with 0.6NA, 120nm L/S patterns have been resolved with conventional illumination
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