Design and simulation of RF-MEMS shunt switch for K-band applications

Abstract

This paper presents the design and simulation of shunt type switch with meanders and perforations. The proposed switch is utilizing silicon nitride (Si3N4) as a dielectric material within the transmission line and the beam is considered as gold (Au), and it offers several benefits in terms of performance such as low spring constant, pull-in voltage, and also good S-parameters. The pull-in voltage is obtained as 4.6 V, the dielectric materials are utilized to improve the capacitance of the switch, which is having is 4.62 fF and 3.94 pF. The Electro-magnetic analysis is done by using the HFSS tool, the return and insertion of the proposed switch are maintained as − 44.69 dB and 0.415 dB at 22 GHz frequency. The isolation is observed at − 40.37 dB at 20 GHz frequency. The proposed device having good results at the 20–22 GHz frequency range. The proposed switch, which operates in the range of 1–25 GHz, gives good results when associated with other devices and is utilizing for K-band and wireless communication systems.