Abstract
Ternary chalcopyrite compound cupper indium disulfide (CuInS2)‐based photovoltaic cells are designed and numerically computed. In this design, n‐CdS and p++‐MoS2have been used as window and back surface field (BSF) layers, respectively. The modeled n‐CdS/p‐CuInS2/p++‐MoS2device provides power conversion efficiency (PCE) of 24.6% withJSCof 26.98 mA cm−2,VOCof 1.05 V, and fill factor (FF) of 86.93%. This efficiency is ≈60% higher the than n‐CdS/p‐CuInS2single heterostructure. Furthermore, the use of a second CuInSe2(CIS) absorber layer between CuInS2absorber and MoS2BSF layer significantly enhances the short‐circuit current. As a result, the current expressively improves to 38.48 mA cm−2, yielding an efficiency of 32.4%. The greater built‐in potential in absorber/BSF interface is attributed to the highJSCandVOC, causing the increment of efficiency. Besides, the photon management by Bragg reflector with 90% back and front reflectance recycling effect further increases the PCE to 36.1%. This work indicates the prospects of CuInS2solar cells with a CuInSe2current augmenter and MoS2BSF layers for the fabrication of efficient CuInS2solar cells.
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