Abstract
This paper presents design and simulation study of complementary metal oxide semiconductor (CMOS) and carbon nanotube field effect transistor (CNFET) based digitally programmable second generation current conveyor (DPCCII). A detailed comparative study of CMOS and CNFET based DPCCII (CMOS-DPCCII) and (CN-DPCCII) for various performance computing parameters like voltage and current gain, current and voltage bandwidth, terminal X and Y resistances and total harmonic distortion (THD) has been done. Simulated results show that the current and voltage bandwidth of CN-DPCCII has increased by 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> orders in comparison to CMOS-DPCCII. In order to verify the functionality of proposed DPCCII all the simulation has been carried out using HSPICE at 32 nm technology node at supply voltage ±0.75V.
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