Abstract
A new kind of SOI LAPS sensor array with trench and heavy doping structure was proposed. Photo current response, noise isolation and device performance were simulated with ISE-TCAD tools. The new structure LAPS sensor array effectively improves noise separation characteristics of adjacent array units. The SNR (signal-to-noise ratio) of LAPS array with trench-isolated structure is superior to that with only heavy doping regions. Trench isolation structure also improves the integration scales of LAPS array.
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