Abstract
The influence of the waveguide parameters, leakage current, electrical and thermal resistances on the maximum linear gain and the corresponding tuning wavelength of buried-heterostructure (BH) semiconductor travelling-wave optical amplifiers (TWAs) operating around 1.5 μm is theoretically analysed. A 26 dB gain TWA has been designed and fabricated from a 400 μm-long BH laser with a 0.2 μm-thick active layer by using low-reflectivity SiO (R ≈ 6 × 10 -4 ) coatings.
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