Abstract
In this work, an InGaAs/InAlAs dopingless tunnel field-effect transistor is designed and systematically examined through numerical simulations. In line with the charge plasma concept, the proposed device can not only create a p-n-i-n structure without doping to enhance electron tunneling but also effectively overcome issues caused by doping such as random doping fluctuation, high thermal budget, etc. By investigating the effects of the HfO2 length (L H), the source-side channel length (L sc), and the source-drain electrodes structure on the proposed device, it concludes that the best device characteristic can be acquired when L H is located between 110 nm and 128 nm, L sc=4 nm, and double source-drain electrodes are adopted.
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