Abstract
In order to obtain uniform exposure in variably shaped electron beam lithography, the beam current density and edge resolution on the target must not change for different spot shapes and sizes. The key to the goal is the appropriate design of shaping deflectors. A linear and rotation compensation approach is presented. Values of linear and rotation compensation factors versus the distances between electron source image and centers of deflectors are measured on an experimental electron beam column with variable spot shaping. The experimental results are in good agreement with the calculated ones.
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