Abstract
We describe the design and performance characteristics of an asymmetric waveguide nitride laser diode structure, in which the p-cladding layer is placed immediately over the multiple-quantum-well (MQW) active region. Its close proximity to the active region enables it to serve not only as a cladding layer, but also as a potential barrier that confines injected electrons. This structure represents a departure from conventional nitride laser diode structures, where electron confinement is provided by a separate high-aluminum-content AlGaN tunnel barrier layer placed over the MQW active region. The optical confinement factor (/spl Gamma/) remains: comparable to that of the conventional structure, in spite of the QW's displacement from the center of the waveguide. Room-temperature CW operation was achieved with this structure.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
