Design and Performance Evaluation of Sub-10 nm Gaussian Doped Junctionless SOI and SELBOX FinFET

Abstract

In this paper influences of uniform and non-uniform doping on the performance of SOI and SELBOX FinFET at gate length of sub-7 nm are evaluated. Junctionless devices require very heavy and uniformly doped very thin channel. It adversely affects the performance such as reduction in on-current, increased off-current, and degradation in short channel behavior. Due to technical limitations, the doping profile becomes non-uniform in the vertical direction. In this simulation studies we use Gaussian doping profile in the vertical dimension to get non-uniform doping profile. The simulations are performed using Silvaco TCAD. Firstly, the performance of uniformly doped SOI and SELBOX Transistors are analyzed and compared. Furthermore, non-uniformly doped SOI and SELBOX FinFETs are analyzed and compared. Comparison is done on the basis of parameters ION, IOFF, ION/IOFF ratio, DIBL, VTH, and SS etc. The simulation results show that the multi-gate structure with SELBOX technology gives best results under non-uniform doping profile.