Abstract
Flexible photodetectors based on transition metal dichalcogenides are gaining significant prominence due to their remarkable optical and electronic properties. This study presents an in-depth performance assessment of molybdenum disulfide (MoS2) as the absorber layer within a vertical Au/MoS2/FTO metal-semiconductor-metal (MSM) photodetector configuration. Utilizing one-dimensional solar cell capacitance simulation (SCAPS-1D) software, we conduct a comprehensive numerical investigation into the photodetector's performance. The systematic simulation of various physical properties of the MoS2 absorber layer, including thickness, doping, and bulk defect density, reveals optimized values of 1 μm, 1018 cm−3, and 1015 cm−3, respectively. The optimized device exhibits peak responsiveness under 700 nm wavelength spectrum illumination, boasting a responsivity of 0.37 AW−1 and a detectivity of 3.27 × 1014 Jones. Furthermore, the impact of temperature and incident light power on the optimized photodetector is thoroughly examined. The proposed photodetector demonstrates considerable potential for cost-effective, easily manufacturable, and durable wearable electronics applications.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
