Abstract

AbstractPlan and optimization of a P-channel Tunnel Field Effect Transistor (TFET) with Graphene Nanoribbon (GNR) as channel material are carried out in this paper to attain high performance in low power advanced circuits. A self-consistent iterative strategy is utilized to illuminate numerically 1-D Poisson’s condition subject to suitable boundary conditions at the source and drain closes of the device. The energy band diagram is gotten from which surface potential and boundary heights are extracted. The structural parameters are appropriately designed to optimize the performance of the device for future application in low power digital circuits.KeywordsGNRTFETSub-threshold swingLow power digital circuit

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